Efficient Modulator Compatible with Silicon-based CMOS Technology
By leveraging the silicon photonic carrier dispersion effect and optimizing the energy and dose conditions of ion implantation, a low-loss, high-efficiency PN junction has been achieved. Additionally, through system-level optoelectronic co-design, the junction capacitance, series resistance, and inductance of the modulator are comprehensively designed. This allows the traveling-wave electrode of the modulator to simultaneously achieve impedance matching and velocity matching. The combination of the high-efficiency, low-loss PN junction design and the optimized traveling-wave electrode design ultimately enables higher bandwidth while maintaining the modulator length. Thanks to these advantages, the modulator can achieve high-speed signal transmission at low voltage swings and is highly compatible, capable of matching most drivers.